參數(shù)資料
型號: GS820E32Q-100
廠商: Electronic Theatre Controls, Inc.
元件分類: DRAM
英文描述: 2M Synchronous Burst SRAM
中文描述: 200萬同步突發(fā)靜態(tài)存儲器
文件頁數(shù): 11/23頁
文件大?。?/td> 345K
代理商: GS820E32Q-100
Rev: 1.03 2/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
11/23
1999, Giga Semconductor, Inc.
D
GS820E32T/Q-150/138/133/117/100/66
AC Test Conditions
Notes:
1.
2.
3.
4.
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted.
Output Load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
.
Device is deselected as defined by the Truth Table.
Parameter
Conditions
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
Output load
2.3V
0.2V
1V/ns
1.25V
1.25V
Fig. 1& 2
DC Electrical Characteristics
Parameter
Symbol
Test Conditions
Mn
Max
Input Leakage Current
(except mode pins)
I
IL
V
IN
= 0 to V
DD
-1uA
1uA
ZZ Input Current
I
INZZ
V
DD
V
IN
V
IH
0V
V
IN
V
IH
V
DD
V
IN
V
IL
0V
V
IN
V
IL
Output Disable,
V
OUT
= 0 to V
DD
I
OH
= - 4mA, V
DDQ
=2.375V
I
OH
= - 4mA, V
DDQ
=3.135V
I
OL
= 4mA
-1uA
-1uA
1uA
300uA
Mode Pin Input Current
I
INM
-300uA
-1uA
1uA
1uA
Output Leakage Current
I
OL
-1uA
1uA
Output High Voltage
V
OH
V
OH
V
OL
1.7V
Output High Voltage
2.4V
Output Low Voltage
0.4V
DQ
VT=1.25V
50
30pF
*
DQ
2.5V
Output Load 1
Output Load 2
225
225
5pF
*
*Distributed Test Jig Capacitance
相關(guān)PDF資料
PDF描述
GS820E32Q-117 2M Synchronous Burst SRAM
GS820E32Q-133 2M Synchronous Burst SRAM
GS820E32Q-133I 2M Synchronous Burst SRAM
GS820E32Q-138 2M Synchronous Burst SRAM
GS820E32Q-138I 2M Synchronous Burst SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS820E32Q-117 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2M Synchronous Burst SRAM
GS820E32Q-133 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2M Synchronous Burst SRAM
GS820E32Q-133I 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2M Synchronous Burst SRAM
GS820E32Q-138 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2M Synchronous Burst SRAM
GS820E32Q-138I 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2M Synchronous Burst SRAM