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參數(shù)資料
| 型號(hào)： | GS8170LW72C-250I |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Low-Noise Operational Amplifier 8-SOIC -40 to 85 |
| 中文描述： | 35.7西格馬1x1Lp的CMOS的I / O后寫(xiě)入SigmaRAM |
| 文件頁(yè)數(shù)： | 26/27頁(yè) |
| 文件大?。?/td> | 884K |
| 代理商： | GS8170LW72C-250I |
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GS8170LW36/72C-333/300/250/200
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.03 1/2005
26/27
2002, GSI Technology, Inc.
Ordering Information—GSI SigmaRAM
Org
Part Number
Type
I/O
Speed
(MHz)
T
A
256K x 72
GS8170LW72C-333
Late Write S1x1Lp SRAM
CMOS
333 MHz
C
256K x 72
GS8170LW72C-300
Late Write S1x1Lp SRAM
CMOS
300 MHz
C
256K x 72
GS8170LW72C-250
Late Write S1x1Lp SRAM
CMOS
250 MHz
C
256K x 72
GS8170LW72C-200
Late Write S1x1Lp SRAM
CMOS
200 MHz
C
256K x 72
GS8170LW72C-333I
Late Write S1x1Lp SRAM
CMOS
333 MHz
I
256K x 72
GS8170LW72C-300I
Late Write S1x1Lp SRAM
CMOS
300 MHz
I
256K x 72
GS8170LW72C-250I
Late Write S1x1Lp SRAM
CMOS
250 MHz
I
256K x 72
GS8170LW72C-200I
Late Write S1x1Lp SRAM
CMOS
200 MHz
I
512K x 36
GS8170LW36C-333
Late Write
Σ
1x1Lp SRAM
CMOS
333 MHz
C
512K x 36
GS8170LW36C-300
Late Write
Σ
1x1Lp SRAM
CMOS
300 MHz
C
512K x 36
GS8170LW36C-250
Late Write
Σ
1x1Lp SRAM
CMOS
250 MHz
C
512K x 36
GS8170LW36C-200
Late Write
Σ
1x1Lp SRAM
CMOS
200 MHz
C
512K x 36
GS8170LW36C-333I
Late Write
Σ
1x1Lp SRAM
CMOS
333 MHz
I
512K x 36
GS8170LW36C-300I
Late Write
Σ
1x1Lp SRAM
CMOS
300 MHz
I
512K x 36
GS8170LW36C-250I
Late Write
Σ
1x1Lp SRAM
CMOS
250 MHz
I
512K x 36
GS8170LW36C-200I
Late Write
Σ
1x1Lp SRAM
CMOS
200 MHz
I
Notes:
1.
2.
Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS817xx36C-300T.
T
A
= C = Commercial Temperature Range. T
A
= I = Industrial Temperature Range.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8170LW72C-300 | Low-Noise Operational Amplifier 8-SOIC -40 to 85 |
| GS8170LW72C-300I | Low-Noise Operational Amplifier 8-SOIC -40 to 85 |
| GS8170LW72C-333 | Low-Noise Operational Amplifier 8-PDIP -40 to 85 |
| GS832136GE-150IV | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS832136E-200IV | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8171DW36AC-300I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 1.8NS 209FBGA - Trays |
| GS8171DW36AC-350 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 1.7NS 209FBGA - Trays |
| GS8171DW36AC-350I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 1.7NS 209BGA - Trays |
| GS8171DW36AGC-250 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 2.1NS 209FBGA - Trays |
| GS8171DW36AGC-300 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 1.8NS 209FBGA - Trays |
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