參數(shù)資料
型號(hào): GS8170DW72C-300I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
中文描述: 256K X 72 STANDARD SRAM, 1.8 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, BGA-209
文件頁數(shù): 10/27頁
文件大?。?/td> 827K
代理商: GS8170DW72C-300I
A
CK
E1
E2
E3
W
DQ
CQ
A
0
–A
n
CK
W
DQ
0
–DQ
n
Bank 0
Bank 1
Bank 2
Bank 3
Bank Enable Truth Table
EP2
EP3
V
SS
V
SS
V
SS
V
DD
V
DD
V
SS
V
DD
V
DD
E2
E3
Bank 0
Bank 1
Bank 2
Bank 3
Active Low
Active Low
Active High
Active High
Active Low
Active High
Active Low
Active High
E1
A
n – 1
A
n
A
0
–A
n – 2
A
n – 1
A
n
A
0
–A
n – 2
A
n – 1
A
n
A
0
–A
n – 2
A
n – 1
A
n
A
0
–A
n – 2
A
CK
E2
E3
W
DQ
CQ
A
CK
E2
E3
W
DQ
CQ
A
CK
E2
E1
E3
W
DQ
CQ
E1
E1
CQ
EP2
EP3
0
0
EP2
EP3
1
0
EP2
EP3
0
1
EP2
EP3
1
1
GS8170DW36/72C-333/300/250/200
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.04 5/2005
10/27
2002, GSI Technology, Inc.
Example Four Bank Depth Expansion Schematic—
Σ
1x1Dp
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