參數(shù)資料
型號: GS8170DW72C-200
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
中文描述: 256K X 72 STANDARD SRAM, 2.25 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, BGA-209
文件頁數(shù): 5/27頁
文件大?。?/td> 827K
代理商: GS8170DW72C-200
GS8170DW36/72C-333/300/250/200
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.04 5/2005
5/27
2002, GSI Technology, Inc.
Read Operations
Pipelined Read
Read operation is initiated when the following conditions are satisfied at the rising edge of clock: All three chip enables (E1, E2,
and E3) are active, the write enable input signal (W) is deasserted high, and ADV is asserted low. The address presented to the
address inputs is latched into the address register and presented to the memory core and control logic. The control logic determines
that a read access is in progress and allows the requested data to propagate to the input of the output register. At the next rising edge
of clock the read data is allowed to propagate through the output register and onto the output pins
Single Data Rate (SDR) Pipelined Read.
Read A
Deselect
Read B
Read C
Read D
A
B
C
D
E
Q(A)
Q(B)
Q(C)
Q(D)
CK
Address
ADV
E1
W
DQ
CQ
Write Operations
Write operation occurs when the following conditions are satisfied at the rising edge of clock: All three chip enables (E1, E2, and
E3) are active, the write enable input signal (W) is asserted low, and ADV is asserted low.
相關(guān)PDF資料
PDF描述
GS8170DW72C-200I 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW72C-250 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW72C-250I 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW72C-300 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW72C-300I 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
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