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參數資料
| 型號： | GS8170DW36C-200 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM |
| 中文描述： | 512K X 36 STANDARD SRAM, 2.25 ns, PBGA209 |
| 封裝： | 14 X 22 MM, 1 MM PITCH, BGA-209 |
| 文件頁數： | 14/27頁 |
| 文件大?。?/td> | 827K |
| 代理商： | GS8170DW36C-200 |
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Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
Description
Value
Unit
V
DD
Voltage on V
DD
Pins
–0.5 to 2.5
V
V
DDQ
Voltage in V
DDQ
Pins
–0.5 to V
DD
V
V
I/O
Voltage on I/O Pins
–0.5 to V
DDQ
+ 0.5 (
≤
2.5 V max.)
V
V
IN
Voltage on Other Input Pins
–0.5 to V
DDQ
+ 0.5 (
≤
2.5 V max.)
V
I
IN
Input Current on Any Pin
+/–100
mA dc
I
OUT
Output Current on Any I/O Pin
+/–100
mA dc
T
J
Maximum Junction Temperature
125
o
C
T
STG
Storage Temperature
–55 to 125
o
C
GS8170DW36/72C-333/300/250/200
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.04 5/2005
14/27
2002, GSI Technology, Inc.
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Recommended Operating Conditions, for an extended period of time, may affect
reliability of this component.
Recommended Operating Conditions
Power Supplies
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Supply Voltage
V
DD
1.7
1.8
1.95
V
1.5 V I/O Supply Voltage
V
DDQ
1.4
1.5
V
DD
V
1.8 V I/O Supply Voltage
V
DDQ
1.7
1.8
V
DD
V
Ambient Temperature
(Commercial Range Versions)
T
A
0
25
70
°
C
1
Ambient Temperature
(Industrial Range Versions)
T
A
–40
25
85
°
C
1
Note:
The part number of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted
are evaluated for worst case in the temperature range marked on the device.
CMOS I/O DC Input Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
CMOS Input High Voltage
V
IH
0.65 * V
DD
—
V
DD
+ 0.3
V
1
CMOS Input Low Voltage
V
IL
–0.3
—
0.35 * V
DD
V
1
Note:
For devices supplied with CMOS input buffers. Compatible with both 1.8 V and 1.5 V I/O drivers.
相關PDF資料 |
PDF描述 |
|---|---|
| GS8170DW36C-200I | 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM |
| GS8170DW36C-250 | 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM |
| GS8170DW36C-250I | 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM |
| GS8170DW36C-300 | 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM |
| GS8170DW36C-333 | 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS8170DW36C-250 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 2.1NS 209FBGA - Trays |
| GS8170DW36C-250I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 2.1NS 209FBGA - Trays |
| GS8170DW72AC-250 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 18MBIT 256KX72 2.1NS 209FBGA - Trays |
| GS8170DW72AC-250I | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 18MBIT 256KX72 2.1NS 209FBGA - Trays |
| GS8170DW72AC-300I | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 18MBIT 256KX72 1.8NS 209FBGA - Trays |
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