參數資料
型號: GS8162V72CGC-333I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 256K x 72 18Mb S/DCD Sync Burst SRAMs
中文描述: 256K X 72 CACHE SRAM, 4.5 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, LEAD FREE, BGA-209
文件頁數: 9/29頁
文件大?。?/td> 675K
代理商: GS8162V72CGC-333I
GS8162V72CC-333/300/250/200/150
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 2/2005
9/29
2004, GSI Technology
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
相關PDF資料
PDF描述
GS8162Z72CC 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8162Z72CC-150 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8162Z72CC-150I 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8162Z72CC-200 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8162Z72CC-200I 18Mb Pipelined and Flow Through Synchronous NBT SRAM
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