參數(shù)資料
型號: GS8162V72CGC-200
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 256K x 72 18Mb S/DCD Sync Burst SRAMs
中文描述: 256K X 72 CACHE SRAM, 6.5 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, LEAD FREE, BGA-209
文件頁數(shù): 21/29頁
文件大?。?/td> 675K
代理商: GS8162V72CGC-200
GS8162V72CC-333/300/250/200/150
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 2/2005
21/29
2004, GSI Technology
device pins and the bits in the Boundary Scan Register is described in the Scan Order Table following. The Boundary Scan
Register, under the control of the TAP Controller, is loaded with the contents of the RAMs I/O ring when the controller is in
Capture-DR state and then is placed between the TDI and TDO pins when the controller is moved to Shift-DR state. SAMPLE-Z,
SAMPLE/PRELOAD and EXTEST instructions can be used to activate the Boundary Scan Register.
JTAG TAP Block Diagram
Identification (ID) Register
The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in
Capture-DR state with the IDCODE command loaded in the Instruction Register. The code is loaded from a 32-bit on-chip ROM.
It describes various attributes of the RAM as indicated below. The register is then placed between the TDI and TDO pins when the
controller is moved into Shift-DR state. Bit 0 in the register is the LSB and the first to reach TDO when shifting begins.
Instruction Register
ID Code Register
·
31 30 29
Boundary Scan Register
0
1
2
0
· · ·
1
2
0
Bypass Register
TDI
TDO
TMS
TCK
Test Access Port (TAP) Controller
1
·
1
0
·
·
·
·
·
·
·
·
·
Control Signals
·
相關(guān)PDF資料
PDF描述
GS8162V72CGC-200I 256K x 72 18Mb S/DCD Sync Burst SRAMs
GS8162V72CGC-250 256K x 72 18Mb S/DCD Sync Burst SRAMs
GS8162V72CGC-250I 256K x 72 18Mb S/DCD Sync Burst SRAMs
GS8162V72CGC-300 256K x 72 18Mb S/DCD Sync Burst SRAMs
GS8162V72CGC-30I 256K x 72 18Mb S/DCD Sync Burst SRAMs
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