參數(shù)資料
型號(hào): GS8162V72CGC-150
廠商: GSI TECHNOLOGY
元件分類(lèi): DRAM
英文描述: 256K x 72 18Mb S/DCD Sync Burst SRAMs
中文描述: 256K X 72 CACHE SRAM, 7.5 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, LEAD FREE, BGA-209
文件頁(yè)數(shù): 8/29頁(yè)
文件大?。?/td> 675K
代理商: GS8162V72CGC-150
GS8162V72CC-333/300/250/200/150
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 2/2005
8/29
2004, GSI Technology
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs and
assumes ADSP is tied high and ADV is tied low.
3.
相關(guān)PDF資料
PDF描述
GS8162V72CGC-150I 256K x 72 18Mb S/DCD Sync Burst SRAMs
GS8162V72CGC-200 256K x 72 18Mb S/DCD Sync Burst SRAMs
GS8162V72CGC-200I 256K x 72 18Mb S/DCD Sync Burst SRAMs
GS8162V72CGC-250 256K x 72 18Mb S/DCD Sync Burst SRAMs
GS8162V72CGC-250I 256K x 72 18Mb S/DCD Sync Burst SRAMs
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