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| 型號： | GS8162V72CC-30I |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 256K x 72 18Mb S/DCD Sync Burst SRAMs |
| 中文描述： | 256 × 72 35.7的S /雙氰胺同步突發(fā)靜態(tài)存儲器 |
| 文件頁數(shù)： | 14/29頁 |
| 文件大小： | 675K |
| 代理商： | GS8162V72CC-30I |
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GS8162V72CC-333/300/250/200/150
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 2/2005
14/29
2004, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
AC Electrical Characteristics
Parameter
Symbol
-333
-300
-250
-200
-150
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
3.0
—
3.3
—
4.0
—
5.0
—
6.7
—
ns
Clock to Output Valid
tKQ
—
2.8
—
2.8
—
3.0
—
3.0
—
3.8
ns
Clock to Output Invalid
tKQX
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
ns
Clock to Output in Low-Z
tLZ
1
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
ns
Setup time
tS
1.0
—
1.0
—
1.2
—
1.5
—
1.5
—
ns
Hold time
tH
0.1
—
0.1
—
0.2
—
0.4
—
0.5
—
ns
Flow
Through
Clock Cycle Time
tKC
4.5
—
5.0
—
5.5
—
6.5
—
7.5
—
ns
Clock to Output Valid
tKQ
—
4.5
—
5.0
—
5.5
—
6.5
—
7.5
ns
Clock to Output Invalid
tKQX
2.0
—
2.0
—
2.0
—
—
6.5
—
7.5
ns
Clock to Output in Low-Z
tLZ
1
2.0
—
2.0
—
2.0
—
2.0
—
2.0
—
ns
Setup time
tS
1.3
—
1.4
—
1.5
—
1.5
—
1.5
—
ns
Hold time
tH
0.3
—
0.4
—
0.5
—
0.5
—
0.5
—
ns
Clock HIGH Time
tKH
1.0
—
1.0
—
1.3
—
1.3
—
1.5
—
ns
Clock LOW Time
tKL
1.2
—
1.2
—
1.5
—
1.5
—
1.7
—
ns
Clock to Output in
High-Z
tHZ
1
1.5
2.8
1.5
2.8
1.5
3.0
1.5
3.0
1.5
3.0
ns
G to Output Valid
tOE
—
2.8
—
2.8
—
3.0
—
3.0
—
3.8
ns
G to output in Low-Z
tOLZ
1
0
—
0
—
0
—
0
—
0
—
ns
G to output in High-Z
tOHZ
1
—
2.8
—
2.8
—
3.0
—
3.0
—
3.8
ns
ZZ setup time
tZZS
2
5
—
5
—
5
—
5
—
5
—
ns
ZZ hold time
tZZH
2
1
—
1
—
1
—
1
—
1
—
ns
ZZ recovery
tZZR
20
—
20
—
20
—
20
—
20
—
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8162V72CC-333 | 256K x 72 18Mb S/DCD Sync Burst SRAMs |
| GS8162V72CC-333I | 256K x 72 18Mb S/DCD Sync Burst SRAMs |
| GS8162V72CGC-150 | 256K x 72 18Mb S/DCD Sync Burst SRAMs |
| GS8162V72CGC-150I | 256K x 72 18Mb S/DCD Sync Burst SRAMs |
| GS8162V72CGC-200 | 256K x 72 18Mb S/DCD Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8162Z18BB-150 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 119FBGA - Trays |
| GS8162Z18BB-150I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 119FBGA - Trays |
| GS8162Z18BB-150IV | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 7.5NS/3.8NS 119FPBGA - Trays |
| GS8162Z18BB-150V | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 7.5NS/3.8NS 119FPBGA - Trays |
| GS8162Z18BD-200 | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 18MBIT 1MX18 6.5NS/3NS 165FBGA - Trays |
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