參數(shù)資料
型號(hào)： GS816236BGD-250I
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
中文描述： 512K X 36 CACHE SRAM, 5.5 ns, PBGA165
封裝： ROHS COMPLIANT, FBGA-165
文件頁(yè)數(shù)： 29/37頁(yè)
文件大?。?/td> 866K
代理商： GS816236BGD-250I
JTAG TAP Instruction Set Summary
Instruction
Code
Description
Notes
EXTEST
000
Places the Boundary Scan Register between TDI and TDO.
1
IDCODE
001
Preloads ID Register and places it between TDI and TDO.
1, 2
SAMPLE-Z
010
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.
Forces all RAM output drivers to High-Z.
Do not use this instruction; Reserved for Future Use.
Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.
1
RFU
011
1
SAMPLE/
PRELOAD
100
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.
1
GSI
101
GSI private instruction.
Do not use this instruction; Reserved for Future Use.
Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.
1
RFU
110
1
BYPASS
111
Places Bypass Register between TDI and TDO.
1
Notes:
1.
2.
Instruction codes expressed in binary, MSB on left, LSB on right.
Default instruction automatically loaded at power-up and in test-logic-reset state.
GS816218/36B(B/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 9/2005
29/37
2004, GSI Technology
JTAG Port AC Test Conditions
Notes:
1.
2.
Include scope and jig capacitance.
Test conditions as shown unless otherwise noted.
Parameter
Conditions
V
DD
– 0.2 V
0.2 V
1 V/ns
V
DDQ
/2
V
DDQ
/2
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
DQ
V
DDQ
/2
50
30pF
*
JTAG Port AC Test Load
* Distributed Test Jig Capacitance
相關(guān)PDF資料
PDF描述
GS816218BB 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
GS816218BD-150 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
GS816218BD-150I 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
GS816218BD-200 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
GS816218BD-200I 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS816236BGD-250IV 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 5.5NS/2.5NS 165FPBGA - Trays
GS816236BGD-250V 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 5.5NS/2.5NS 165FPBGA - Trays
GS816236D-133I 制造商:GSI Technology 功能描述:512K X 36 CACHE SRAM, 8.5 ns, PBGA165
GS816236D-166I 制造商:GSI Technology 功能描述:512K X 36 CACHE SRAM, 7 ns, PBGA165
GS816236DB-150 制造商:GSI Technology 功能描述:119 BGA - Bulk
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*