參數(shù)資料
型號(hào): GS816218BD-250I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
中文描述: 1M X 18 CACHE SRAM, 5.5 ns, PBGA165
封裝: FBGA-165
文件頁數(shù): 12/37頁
文件大?。?/td> 866K
代理商: GS816218BD-250I
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
GS816218/36B(B/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 9/2005
12/37
2004, GSI Technology
Simplified State Diagram with G
相關(guān)PDF資料
PDF描述
GS816218BGB-150 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
GS816218BGB-150I 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
GS816218BGB-200 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
GS816218BGB-200I 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
GS816218BGB-250 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS816218BD-250IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 5.5NS/2.5NS 165FPBGA - Trays
GS816218BD-250V 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 5.5NS/2.5NS 165FPBGA - Trays
GS816218BGB-150 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 119FBGA - Trays
GS816218BGB-150I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 119FBGA - Trays
GS816218BGB-150IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 7.5NS/3.8NS 119FBGA - Trays