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參數(shù)資料
| 型號(hào)： | GS816218B-166 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs |
| 中文描述： | 1M X 18 CACHE SRAM, 7 ns, PBGA119 |
| 封裝： | FBGA-119 |
| 文件頁(yè)數(shù)： | 41/41頁(yè) |
| 文件大小： | 980K |
| 代理商： | GS816218B-166 |
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GS816218(B/D)/GS816236(B/D)/GS816272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.17 11/2004
41/41
1999, GSI Technology
816218_r2_12;
816218_r2_13
Content
Updated table on page 1
Created recommended operating conditions tables on pages
16 and 17
Updated AC Electrical Characteristics table
Added Sleep mode description on page 29
Updated Ordering Information for 225 MHz part (changed
from 7ns to 6.5 ns)
Updated BSR table (2 and 3 changed to X (value undefined))
Added 250 MHz speed bin
Deleted 180 MHz speed bin
Updated AC Characteristics table
Updated package designator for 209 BGA from B to C
Updated VIH from 1.7 to 2.0
Updated FT power numbers
Updated Mb references from 16Mb to 18Mb
Removed ByteSafe references
Changed DP and QE pins to NC
Updated ZZ recovery time diagram
Add 165-bump FPBGA package
Updated AC Test Conditions table and removed Output Load
2 diagram
Removed parity I/O bit designation from 165 BGA pinout
Removed Preliminary banner
Removed BSR table
Removed pin locations from pin description tables
Removed 250 MHz and 225 MHz specs from x72
Updated AC Characteristics table (tHZ, tOE, tOHZ equal to
tKQ (PL) for 250 MHz and 225 MHz)
New timing diagrams added
Updated format
Updated timing diagrams
816218_r2_13;
816218_r2_14
Content
816218_r2_14;
816218_r2_15
Content
816218_r2_15;
816218_r2_16
Content
816218_r2_16;
816218_r2_17
Format/Content
18Mb Sync SRAM Datasheet Revision History
DS/DateRev. Code: Old;
New
Types of Changes
Format or Content
Page;Revisions;Reason
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS816218B-166I | 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs |
| GS816218B-200 | 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs |
| GS816218B-200I | 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs |
| GS816218B-225 | 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs |
| GS816218B-225I | 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS816218BB-150 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 3.3V 18MBIT 1MX18 7.5NS/3.8NS 119FBGA - Trays |
| GS816218BB-150I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 3.3V 18MBIT 1MX18 7.5NS/3.8NS 119FBGA - Trays |
| GS816218BB-150IV | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 119FPBGA - Trays |
| GS816218BB-150V | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 119FPBGA - Trays |
| GS816218BB-200 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 3.3V 18MBIT 1MX18 6.5NS/3NS 119FBGA - Trays |
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