參數(shù)資料
型號(hào)： GS8161Z36BGT-150IV
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 18Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述： 512K X 36 ZBT SRAM, 7.5 ns, PQFP100
封裝： ROHS COMPLIANT, TQFP-100
文件頁(yè)數(shù)： 17/35頁(yè)
文件大?。?/td> 790K
代理商： GS8161Z36BGT-150IV
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage on V
DDQ
Pins
Value
Unit
–
0.5 to 4.6
V
–
0.5 to V
DD
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
GS8161ZxxB(T/D)-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01a 6/2006
17/35
2004, GSI Technology
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges (1.8 V/2.5 V Version)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
1.8 V Supply Voltage
V
DD1
1.7
1.8
2.0
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
1.8 V V
DDQ
I/O Supply Voltage
V
DDQ1
1.7
1.8
V
DD
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
V
DD
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料
PDF描述
GS8161Z36BGT-150V 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z36BGT-200IV 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z36BGT-200V 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z36BGT-250IV 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z36BGT-250V 18Mb Pipelined and Flow Through Synchronous NBT SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8161Z36BGT-150V 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX36 7.5NS/3.8NS 100TQFP - Trays
GS8161Z36BGT-200 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 6.5NS/3NS 100TQFP - Trays 制造商:GSI Technology 功能描述:GTEGS8161Z36BGT-200 512K X 36 (18 MEG)
GS8161Z36BGT-200I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 6.5NS/3NS 100TQFP - Trays
GS8161Z36BGT-200IV 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX36 6.5NS/3NS 100TQFP - Trays
GS8161Z36BGT-200V 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX36 6.5NS/3NS 100TQFP - Trays
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