參數(shù)資料
型號(hào)： GS8161Z32T-200T
廠商： Electronic Theatre Controls, Inc.
英文描述： Dual Voltage Clamp 8-SM8 -40 to 85
中文描述： 35.7流水線和流量，通過同步唑的SRAM
文件頁(yè)數(shù)： 10/36頁(yè)
文件大?。?/td> 939K
代理商： GS8161Z32T-200T
GS8161Z18(T/D)/GS8161Z32(D)/GS8161Z36(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.15 11/2004
10/36
1998, GSI Technology
Synchronous Truth Table
Operation
Type
Address
CK CKE ADV W Bx E
1
E
2
E
3
G ZZ
DQ
Notes
Read Cycle, Begin Burst
R
External
L-H
L
L
H
X
L
H
L
L
L
Q
Read Cycle, Continue Burst
B
Next
L-H
L
H
X
X
X
X
X
L
L
Q
1,10
NOP/Read, Begin Burst
R
External
L-H
L
L
H
X
L
H
L
H
L
High-Z
2
Dummy Read, Continue Burst
B
Next
L-H
L
H
X
X
X
X
X
H
L
High-Z
1,2,10
Write Cycle, Begin Burst
W
External
L-H
L
L
L
L
L
H
L
X
L
D
3
Write Cycle, Continue Burst
B
Next
L-H
L
H
X
L
X
X
X
X
L
D
1,3,10
Write Abort, Continue Burst
B
Next
L-H
L
H
X
H
X
X
X
X
L
High-Z 1,2,3,10
Deselect Cycle, Power Down
D
None
L-H
L
L
X
X
H
X
X
X
L
High-Z
Deselect Cycle, Power Down
D
None
L-H
L
L
X
X
X
X
H
X
L
High-Z
Deselect Cycle, Power Down
D
None
L-H
L
L
X
X
X
L
X
X
L
High-Z
Deselect Cycle
D
None
L-H
L
L
L
H
L
H
L
X
L
High-Z
1
Deselect Cycle, Continue
D
None
L-H
L
H
X
X
X
X
X
X
L
High-Z
1
Sleep Mode
None
X
X
X
X
X
X
X
X
X
H
High-Z
Clock Edge Ignore, Stall
Current
L-H
H
X
X
X
X
X
X
X
L
-
4
Notes:
1.
Continue Burst cycles, whether read or write, use the same control inputs. A Deselect continue cycle can only be entered into if a Dese-
lect cycle is executed first.
Dummy Read and Write abort can be considered NOPs because the SRAM performs no operation. A Write abort occurs when the W
pin is sampled low but no Byte Write pins are active so no write operation is performed.
G can be wired low to minimize the number of control signals provided to the SRAM. Output drivers will automatically turn off during
write cycles.
If CKE High occurs during a pipelined read cycle, the DQ bus will remain active (Low Z). If CKE High occurs during a write cycle, the bus
will remain in High Z.
X = Don’t Care; H = Logic High; L = Logic Low; Bx = High = All Byte Write signals are high; Bx = Low = One or more Byte/Write
signals are Low
All inputs, except G and ZZ must meet setup and hold times of rising clock edge.
Wait states can be inserted by setting CKE high.
This device contains circuitry that ensures all outputs are in High Z during power-up.
A 2-bit burst counter is incorporated.
10. The address counter is incriminated for all Burst continue cycles.
2.
3.
4.
5.
6.
7.
8.
9.
相關(guān)PDF資料
PDF描述
GS8161Z32T-225 Dual Voltage Clamp 8-US8 -40 to 85
GS8161Z32T-225I Dual Voltage Clamp 8-US8 -40 to 85
GS8161Z32T-225T Dual Voltage Clamp 8-US8 -40 to 85
GS8161Z32T-250 512 x 18 Synchronous FIFO Memory 64-TQFP 0 to 70
GS8161Z32T-250I 512 x 18 Synchronous FIFO Memory 64-TQFP 0 to 70
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GS8161Z32T-225IT 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z32T-225T 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z32T-250 制造商:未知廠家 制造商全稱:未知廠家 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
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