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參數(shù)資料
| 型號： | GS8161Z18BT-150V |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 1M X 18 ZBT SRAM, 7.5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 15/35頁 |
| 文件大?。?/td> | 790K |
| 代理商： | GS8161Z18BT-150V |
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Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
GS8161ZxxB(T/D)-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01a 6/2006
15/35
2004, GSI Technology
Burst Counter Sequences
BPR 1999.05.18
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| GS8161Z18BT-200IV | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
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| GS8161Z18BT-V | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
相關代理商/技術參數(shù) |
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|---|---|
| GS8161Z18BT-200 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z18BT-200I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z18BT-200IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z18BT-200V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z18BT-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
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