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參數(shù)資料
| 型號： | GS8161Z18BGT-250V |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 1M X 18 ZBT SRAM, 5.5 ns, PQFP100 |
| 封裝： | ROHS COMPLIANT, TQFP-100 |
| 文件頁數(shù)： | 13/35頁 |
| 文件大?。?/td> | 790K |
| 代理商： | GS8161Z18BGT-250V |
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GS8161ZxxB(T/D)-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01a 6/2006
13/35
2004, GSI Technology
High Z
(Data In)
Data Out
(Q Valid)
High Z
B W
B
R
B
D
R
W
R
W
D
D
Current State (n)
Next State (n+1)
Transition
Input Command Code
Key
Notes:
1. The Hold command (CKE Low) is not
shown because it prevents any state change.
2. W, R, B, and D represent input command
codes as indicated in the Truth Tables.
Clock (CK)
Command
Current State
Next State
n
n+1
n+2
n+3
Current State and Next State Definition for:
Pipeline and Flow through Read Write Control State Diagram
Flow Through Mode Data I/O State Diagram
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| GS8161Z18BT | 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
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| GS8161Z18BT-150V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
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