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參數(shù)資料
| 型號： | GS8161Z18BGD-150IV |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 1M X 18 ZBT SRAM, 7.5 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 |
| 文件頁數(shù)： | 15/35頁 |
| 文件大?。?/td> | 790K |
| 代理商： | GS8161Z18BGD-150IV |
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Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
GS8161ZxxB(T/D)-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01a 6/2006
15/35
2004, GSI Technology
Burst Counter Sequences
BPR 1999.05.18
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| GS8161Z18BGD-150V | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
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| GS8161Z18BGD-250IV | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8161Z18BGD-150V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z18BGD-200 | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 2.5V/3.3V 18MBIT 1MX18 6.5NS/3NS 165FBGA - Trays |
| GS8161Z18BGD-200I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 6.5NS/3NS 165FBGA - Trays |
| GS8161Z18BGD-200IV | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 6.5NS/3NS 165FBGA - Trays |
| GS8161Z18BGD-200V | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 1MX18 6.5NS/3NS 165FPBGA - Trays |
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