- 您現(xiàn)在的位置：買賣IC網 > PDF目錄383025 > GS8161V36CD-333I (GSI TECHNOLOGY) 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs PDF資料下載
參數(shù)資料
| 型號： | GS8161V36CD-333I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs |
| 中文描述： | 512K X 36 CACHE SRAM, 4.5 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1 MM PITCH, FBGA-165 |
| 文件頁數(shù)： | 20/28頁 |
| 文件大?。?/td> | 584K |
| 代理商： | GS8161V36CD-333I |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁當前第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁
GS8161V18/36CD-333/300/250
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 2/2005
20/28
2004, GSI Technology
JTAG TAP Block Diagram
Identification (ID) Register
The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in Capture-
DR state with the IDCODE command loaded in the Instruction Register. The code is loaded from a 32-bit on-chip ROM. It describes
various attributes of the RAM as indicated below. The register is then placed between the TDI and TDO pins when the controller is
moved into Shift-DR state. Bit 0 in the register is the LSB and the first to reach TDO when shifting begins.
ID Register Contents
Die
Revision
Code
Not Used
I/O
Configuration
GSI Technology
JEDEC Vendor
ID Code
P
0
1
1
1
Bit #
x72
x36
x18
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
X
X
X
X
0
0
0
0
0
0
0
0
0
0
X
X
X
X
0
0
0
0
0
0
0
0
0
0
X
X
X
X
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
0
0
0
0
0
1
1
0
0
0
0
0
0
0
0
0 1 1 0 1 1 0 0 1
0 1 1 0 1 1 0 0 1
0 1 1 0 1 1 0 0 1
Instruction Register
ID Code Register
·
31 30 29
Boundary Scan Register
0
1
2
0
· · ·
1
2
0
Bypass Register
TDI
TDO
TMS
TCK
Test Access Port (TAP) Controller
1
·
1
0
·
·
·
·
·
·
·
·
·
Control Signals
·
相關PDF資料 |
PDF描述 |
|---|---|
| GS8161V36CGD-250 | 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs |
| GS8161V36CGD-250I | 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs |
| GS8161V36CGD-300 | 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs |
| GS8161V36CGD-300I | 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs |
| GS8161V36CGD-333 | 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GS8161V36CGD-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18 and 512K x 36 18Mb Sync Burst SRAMs |
| GS8161V36CGD-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18 and 512K x 36 18Mb Sync Burst SRAMs |
| GS8161V36CGD-300 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18 and 512K x 36 18Mb Sync Burst SRAMs |
| GS8161V36CGD-300I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18 and 512K x 36 18Mb Sync Burst SRAMs |
| GS8161V36CGD-333 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18 and 512K x 36 18Mb Sync Burst SRAMs |
發(fā)布緊急采購，3分鐘左右您將得到回復。