參數(shù)資料
型號: GS8161E36D-225I
廠商: Electronic Theatre Controls, Inc.
英文描述: 25-Bit Configurable Registered Buffer With Address-Parity Test 96-LFBGA 0 to 70
中文描述: 100萬× 18,512k × 32的,為512k × 36 35.7同步突發(fā)靜態(tài)存儲器
文件頁數(shù): 19/36頁
文件大小: 939K
代理商: GS8161E36D-225I
GS8161Z18(T/D)/GS8161Z32(D)/GS8161Z36(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.15 11/2004
19/36
1998, GSI Technology
DC Electrical Characteristics
Parameter
Input Leakage Current
(except mode pins)
Symbol
Test Conditions
Min
Max
I
IL
V
IN
= 0 to V
DD
1 uA
1 uA
ZZ Input Current
I
IN1
V
DD
V
IN
V
IH
0 V
V
IN
V
IH
V
DD
V
IN
V
IL
0 V
V
IN
V
IL
Output Disable, V
OUT
= 0 to V
DD
I
OH
=
8 mA, V
DDQ
= 2.375 V
I
OH
=
8 mA, V
DDQ
= 3.135 V
I
OL
= 8 mA
1 uA
1 uA
1 uA
100 uA
FT Input Current
I
IN2
100 uA
1 uA
1 uA
1 uA
Output Leakage Current
I
OL
V
OH2
V
OH3
V
OL
1 uA
1 uA
Output High Voltage
1.7 V
Output High Voltage
2.4 V
Output Low Voltage
0.4 V
相關(guān)PDF資料
PDF描述
GS8161E36D-250 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36D-250I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36T-150I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36T-166 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36T-166I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8161E36D-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36D-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36DD-150 制造商:GSI Technology 功能描述:165 BGA - Bulk
GS8161E36DD-150I 制造商:GSI Technology 功能描述:165 BGA - Bulk
GS8161E36DD-150IV 制造商:GSI Technology 功能描述:165 BGA - Bulk