參數(shù)資料
型號(hào): GS8161E32D-200I
廠(chǎng)商: Electronic Theatre Controls, Inc.
元件分類(lèi): DRAM
英文描述: 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
中文描述: 1M×18,512k×32,512k×36 18M位同步突發(fā)靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù): 31/36頁(yè)
文件大?。?/td> 939K
代理商: GS8161E32D-200I
GS8161Z18(T/D)/GS8161Z32(D)/GS8161Z36(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.15 11/2004
31/36
1998, GSI Technology
TQFP Package Drawing (Package T)
D
D
E1
E
P
b
e
c
L
L1
A2
A1
Y
θ
Notes:
1.
2.
All dimensions are in millimeters (mm).
Package width and length do not include mold protrusion.
Symbol
Description
Min.
Nom.
Max
A1
Standoff
0.05
0.10
0.15
A2
Body Thickness
1.35
1.40
1.45
b
Lead Width
0.20
0.30
0.40
c
Lead Thickness
0.09
0.20
D
Terminal Dimension
21.9
22.0
22.1
D1
Package Body
19.9
20.0
20.1
E
Terminal Dimension
15.9
16.0
16.1
E1
Package Body
13.9
14.0
14.1
e
Lead Pitch
0.65
L
Foot Length
0.45
0.60
0.75
L1
Lead Length
1.00
Y
Coplanarity
0.10
θ
Lead Angle
0
°
7
°
相關(guān)PDF資料
PDF描述
GS8161E32D-225 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E32D-225I 20-Bit SSTL_3 Interface Buffer With 3-State Outputs 64-TSSOP 0 to 70
GS8161E32D-250 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E32D-250I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8161E32D-225 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E32D-225I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E32D-250 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E32D-250I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E32DD-150 制造商:GSI Technology 功能描述:165 BGA - Bulk