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參數資料
| 型號： | GS8161E32BGD-250I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| 中文描述： | 512K X 32 CACHE SRAM, 5.5 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 |
| 文件頁數： | 25/35頁 |
| 文件大?。?/td> | 766K |
| 代理商： | GS8161E32BGD-250I |
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Instruction Register
ID Code Register
·
31 30 29
Boundary Scan Register
0
1
2
0
· · ·
1
2
0
Bypass Register
TDI
TDO
TMS
TCK
Test Access Port (TAP) Controller
1
·
1
0
·
·
·
·
·
·
·
·
·
Control Signals
·
GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 9/2005
25/35
2004, GSI Technology
JTAG TAP Block Diagram
Identification (ID) Register
The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in
Capture-DR state with the IDCODE command loaded in the Instruction Register. The code is loaded from a 32-bit on-chip ROM.
It describes various attributes of the RAM as indicated below. The register is then placed between the TDI and TDO pins when the
controller is moved into Shift-DR state. Bit 0 in the register is the LSB and the first to reach TDO when shifting begins.
ID Register Contents
Die
Revision
Code
Not Used
I/O
Configuration
GSI Technology
JEDEC Vendor
ID Code
P
0
1
1
Bit #
x36
x18
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
X
X
X
X
0
0
0
X
1
0
0
1
0
0
X
X
X
X
0
0
0
X
1
0
0
1
0
0
0
0
0
0
1
1
0
0
0
1
0
0
0
0
0
0
0 1 1 0 1 1 0 0 1
0 1 1 0 1 1 0 0 1
相關PDF資料 |
PDF描述 |
|---|---|
| GS8161E36BD-150 | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E36BD-150I | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E36BD-200 | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E36BD-200I | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E36BD-250 | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS8161E32BGD-250IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E32BGD-250V | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX32 5.5NS/3NS 165FBGA - Trays |
| GS8161E32D-133 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E32D-133I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E32D-150 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
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