參數(shù)資料
型號: GS8161E32BD-200I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
中文描述: 512K X 32 CACHE SRAM, 6.5 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, FPBGA-165
文件頁數(shù): 32/35頁
文件大?。?/td> 766K
代理商: GS8161E32BD-200I
GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 9/2005
32/35
2004, GSI Technology
TQFP Package Drawing (Package T)
D
D
E1
E
P
b
e
c
L
L1
A2
A1
Y
θ
Notes:
1.
2.
All dimensions are in millimeters (mm).
Package width and length do not include mold protrusion.
Symbol
Description
Min.
Nom.
Max
A1
Standoff
0.05
0.10
0.15
A2
Body Thickness
1.35
1.40
1.45
b
Lead Width
0.20
0.30
0.40
c
Lead Thickness
0.09
0.20
D
Terminal Dimension
21.9
22.0
22.1
D1
Package Body
19.9
20.0
20.1
E
Terminal Dimension
15.9
16.0
16.1
E1
Package Body
13.9
14.0
14.1
e
Lead Pitch
0.65
L
Foot Length
0.45
0.60
0.75
L1
Lead Length
1.00
Y
Coplanarity
0.10
θ
Lead Angle
0
°
7
°
相關PDF資料
PDF描述
GS8161E32BD-250 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E32BD-250I 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E32BGD-150 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E32BGD-150I 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E32BGD-200 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
相關代理商/技術參數(shù)
參數(shù)描述
GS8161E32BD-200IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E32BD-200V 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX32 6.5NS/3NS 165FPBGA - Trays
GS8161E32BD-250 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX32 5.5NS/2.5NS 165FBGA - Trays
GS8161E32BD-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E32BD-250IV 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX32 5.5NS/3NS 165FPBGA - Trays