參數(shù)資料
型號(hào): GS8161E18T-166
廠商: Electronic Theatre Controls, Inc.
英文描述: Quad 2-input Exclusive-OR gates 14-PDIP 0 to 70
中文描述: 100萬(wàn)× 18,512k × 32的,為512k × 36 35.7同步突發(fā)靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù): 31/36頁(yè)
文件大小: 939K
代理商: GS8161E18T-166
GS8161Z18(T/D)/GS8161Z32(D)/GS8161Z36(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.15 11/2004
31/36
1998, GSI Technology
TQFP Package Drawing (Package T)
D
D
E1
E
P
b
e
c
L
L1
A2
A1
Y
θ
Notes:
1.
2.
All dimensions are in millimeters (mm).
Package width and length do not include mold protrusion.
Symbol
Description
Min.
Nom.
Max
A1
Standoff
0.05
0.10
0.15
A2
Body Thickness
1.35
1.40
1.45
b
Lead Width
0.20
0.30
0.40
c
Lead Thickness
0.09
0.20
D
Terminal Dimension
21.9
22.0
22.1
D1
Package Body
19.9
20.0
20.1
E
Terminal Dimension
15.9
16.0
16.1
E1
Package Body
13.9
14.0
14.1
e
Lead Pitch
0.65
L
Foot Length
0.45
0.60
0.75
L1
Lead Length
1.00
Y
Coplanarity
0.10
θ
Lead Angle
0
°
7
°
相關(guān)PDF資料
PDF描述
GS8161E18T-166I Quad 2-input Exclusive-OR gates 14-SO 0 to 70
GS8161E18T-200 Quad 2-input Exclusive-OR gates 14-SO 0 to 70
GS8161E18T-200I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18T-225 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18T-225I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8161E18T-166I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18T-200 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18T-200I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18T-225 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18T-225I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs