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| 型號： | GS8161E18T-150I |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | DRAM |
| 英文描述： | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| 中文描述： | 1M×18，512k×32，512k×36 18M位同步突發(fā)靜態(tài)存儲器 |
| 文件頁數(shù)： | 25/36頁 |
| 文件大?。?/td> | 939K |
| 代理商： | GS8161E18T-150I |
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GS8161Z18(T/D)/GS8161Z32(D)/GS8161Z36(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.15 11/2004
25/36
1998, GSI Technology
JTAG TAP Block Diagram
Identification (ID) Register
The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in
Capture-DR state with the IDCODE command loaded in the Instruction Register. The code is loaded from a 32-bit on-chip ROM.
It describes various attributes of the RAM as indicated below. The register is then placed between the TDI and TDO pins when the
controller is moved into Shift-DR state. Bit 0 in the register is the LSB and the first to reach TDO when shifting begins.
ID Register Contents
Die
Revision
Code
Not Used
I/O
Configuration
GSI Technology
JEDEC Vendor
ID Code
P
0
1
1
Bit #
x36
x18
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
X
X
X
X
0
0
0
X
1
0
0
1
0
0
X
X
X
X
0
0
0
X
1
0
0
1
0
0
0
0
0
0
1
1
0
0
0
1
0
0
0
0
0
0
0 1 1 0 1 1 0 0 1
0 1 1 0 1 1 0 0 1
Instruction Register
ID Code Register
·
31 30 29
Boundary Scan Register
0
1
2
0
· · ·
1
2
0
Bypass Register
TDI
TDO
TMS
TCK
Test Access Port (TAP) Controller
1
·
1
0
·
·
·
·
·
·
·
·
·
Control Signals
·
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8161E18T-166 | Quad 2-input Exclusive-OR gates 14-PDIP 0 to 70 |
| GS8161E18T-166I | Quad 2-input Exclusive-OR gates 14-SO 0 to 70 |
| GS8161E18T-200 | Quad 2-input Exclusive-OR gates 14-SO 0 to 70 |
| GS8161E18T-200I | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18T-225 | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8161E18T-166 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18T-166I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18T-200 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18T-200I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18T-225 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
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