參數(shù)資料
型號: GS8161E18D-250I
廠商: Electronic Theatre Controls, Inc.
英文描述: Quad 2-input Exclusive-OR gates 14-SOIC 0 to 70
中文描述: 100萬× 18,512k × 32的,為512k × 36 35.7同步突發(fā)靜態(tài)存儲器
文件頁數(shù): 31/36頁
文件大?。?/td> 939K
代理商: GS8161E18D-250I
GS8161Z18(T/D)/GS8161Z32(D)/GS8161Z36(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.15 11/2004
31/36
1998, GSI Technology
TQFP Package Drawing (Package T)
D
D
E1
E
P
b
e
c
L
L1
A2
A1
Y
θ
Notes:
1.
2.
All dimensions are in millimeters (mm).
Package width and length do not include mold protrusion.
Symbol
Description
Min.
Nom.
Max
A1
Standoff
0.05
0.10
0.15
A2
Body Thickness
1.35
1.40
1.45
b
Lead Width
0.20
0.30
0.40
c
Lead Thickness
0.09
0.20
D
Terminal Dimension
21.9
22.0
22.1
D1
Package Body
19.9
20.0
20.1
E
Terminal Dimension
15.9
16.0
16.1
E1
Package Body
13.9
14.0
14.1
e
Lead Pitch
0.65
L
Foot Length
0.45
0.60
0.75
L1
Lead Length
1.00
Y
Coplanarity
0.10
θ
Lead Angle
0
°
7
°
相關(guān)PDF資料
PDF描述
GS8161E18T-133 Quad 2-input Exclusive-OR gates 14-SOIC 0 to 70
GS8161E36D-225I 25-Bit Configurable Registered Buffer With Address-Parity Test 96-LFBGA 0 to 70
GS8161E36D-250 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36D-250I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36T-150I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
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