參數(shù)資料
型號(hào)： GS8161E18BGT-200I
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
中文描述： 1M X 18 CACHE SRAM, 6.5 ns, PQFP100
封裝： ROHS COMPLIANT, TQFP-100
文件頁(yè)數(shù)： 28/35頁(yè)
文件大?。?/td> 766K
代理商： GS8161E18BGT-200I
JTAG TAP Instruction Set Summary
Instruction
Code
Description
Notes
EXTEST
000
Places the Boundary Scan Register between TDI and TDO.
1
IDCODE
001
Preloads ID Register and places it between TDI and TDO.
1, 2
SAMPLE-Z
010
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.
Forces all RAM output drivers to High-Z.
Do not use this instruction; Reserved for Future Use.
Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.
1
RFU
011
1
SAMPLE/
PRELOAD
100
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.
1
GSI
101
GSI private instruction.
Do not use this instruction; Reserved for Future Use.
Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.
1
RFU
110
1
BYPASS
111
Places Bypass Register between TDI and TDO.
1
Notes:
1.
2.
Instruction codes expressed in binary, MSB on left, LSB on right.
Default instruction automatically loaded at power-up and in test-logic-reset state.
GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 9/2005
28/35
2004, GSI Technology
相關(guān)PDF資料
PDF描述
GS8161E18BGT-250 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGT-250I 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BT 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BT-150 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BT-150I 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8161E18BGT-200IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGT-200V 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGT-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGT-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGT-250IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
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