參數(shù)資料
型號: GS8161E18BGD-250IV
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
中文描述: 1M X 18 CACHE SRAM, 5.5 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件頁數(shù): 34/35頁
文件大小: 779K
代理商: GS8161E18BGD-250IV
GS8161ExxB(T/D)-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01a 6/2006
34/35
2004, GSI Technology
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PDF描述
GS8161E18BGD-250V 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGT-150IV 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGT-150V 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGT-200IV 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8161E18BGD-250V 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGT-150 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGT-150I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGT-150IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGT-150V 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs