參數(shù)資料
型號(hào): GS816136T-166I
廠商: Electronic Theatre Controls, Inc.
英文描述: 165 Bump BGA?x18 Commom I/O?Top View (Package D)
中文描述: 165焊球BGA封裝?x18 Commom的I / O?頂視圖(D組)
文件頁數(shù): 28/40頁
文件大?。?/td> 1391K
代理商: GS816136T-166I
Rev: 2.12 9/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
20/32
1999, Giga Semiconductor, Inc.
GS816118/36T-250/225/200/166/150/133
Pipelined SCD Read Cycle Timing
Q1
A
Q3
A
Q2
D
Q2c
Q2
B
Q2
A
tKQ
tLZ
tOE
tOHZ
tOLZ
tKQX
tHZ
tKQX
CK
ADSP
ADSC
BW
G
GW
ADV
Burst Read
RD2
RD3
tKL
tS
tH
tH
tS tH
tS tH
ADSC initiated read
Suspend Burst
Single Read
ADSP is blocked by E inactive
A
0
–An
BW
A
–BW
D
tKH
tKC
tS
tH
tS
tS
tH
DQ
A
–DQ
D
RD1
Hi-Z
tH
E
1
masks ADSP
E
1
tS
相關(guān)PDF資料
PDF描述
GS816136 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM)
GS816118 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM)
GS8161E18BD-200I 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGD-200I 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGD-250 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8161E18 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BD-150 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 165FBGA - Trays
GS8161E18BD-150I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BD-150IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BD-150V 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs