- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄383022 > GS8160Z36BGT-250IT (Electronic Theatre Controls, Inc.) 18Mb Pipelined and Flow Through Synchronous NBT SRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | GS8160Z36BGT-250IT |
| 廠(chǎng)商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 35.7流水線(xiàn)和流量，通過(guò)同步唑的SRAM |
| 文件頁(yè)數(shù)： | 13/23頁(yè) |
| 文件大?。?/td> | 597K |
| 代理商： | GS8160Z36BGT-250IT |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)當(dāng)前第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)
GS8160Z18/36BT-250/200/150
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 8/2004
13/23
2004, GSI Technology
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
–
0.5 to 4.6
V
–
0.5 to 4.6
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
V
DD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
3.3 V V
DDQ
I/O Supply Voltage
V
DDQ3
3.0
3.3
3.6
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
2.7
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8160Z36BGT-250T | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8160Z18 | 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線(xiàn)式和流通型同步NBT靜態(tài)RAM) |
| GS8160Z36 | 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線(xiàn)式和流通型同步NBT靜態(tài)RAM) |
| GS816118D-133 | Pin Strip Header; No. of Contacts:36; Pitch Spacing:0.1"; No. of Rows:2; Contact Material:Copper Alloy; Contact Plating:Gold; Leaded Process Compatible:Yes; Mounting Type:PCB Straight Thru Hole; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes |
| GS816118D-133I | 165 Bump BGA?x18 Commom I/O?Top View (Package D) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8160Z36BGT-250IV | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX36 5.5NS/3NS 100TQFP - Trays |
| GS8160Z36BGT-250T | 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8160Z36BGT-250V | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX36 5.5NS/3NS 100TQFP - Trays |
| GS8160Z36BT-150 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8160Z36BT-150I | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。