參數(shù)資料
型號(hào): GS8160Z36
廠商: GSI TECHNOLOGY
英文描述: 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線式和流通型同步NBT靜態(tài)RAM)
中文描述: 16Mb的流水線和流量,通過(guò)同步唑的SRAM(1,600位流水線式和流通型同步唑靜態(tài)內(nèi)存)
文件頁(yè)數(shù): 15/24頁(yè)
文件大小: 476K
代理商: GS8160Z36
Rev: 2.08 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
15/24
1998, Giga Semiconductor, Inc.
Preliminary
GS8160Z18/36T-225/200/180/166/150/133
AC Test Conditions
Notes:
1.
2.
3.
4.
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
Output Load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
Device is deselected as defined by the Truth Table.
Parameter
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
Output load
Conditions
2.3 V
0.2 V
1 V/ns
1.25 V
1.25 V
Fig. 1& 2
DC Electrical Characteristics
Parameter
Input Leakage Current
(except mode pins)
Symbol
Test Conditions
Min
Max
I
IL
V
IN
= 0 to V
DD
1 uA
1 uA
ZZ Input Current
I
INZZ
V
DD
V
IN
V
IH
0 V
V
IN
V
IH
V
DD
V
IN
V
IL
0 V
V
IN
V
IL
Output Disable, V
OUT
= 0 to V
DD
I
OH
=
8 mA, V
DDQ
= 2.375 V
I
OH
=
8 mA, V
DDQ
= 3.135 V
I
OL
= 8 mA
1 uA
1 uA
1 uA
300 uA
Mode Pin Input Current
I
INM
300 uA
1 uA
1 uA
1 uA
Output Leakage Current
I
OL
V
OH
V
OH
V
OL
1 uA
1 uA
Output High Voltage
1.7 V
Output High Voltage
2.4 V
Output Low Voltage
0.4 V
DQ
VT = 1.25 V
50
30pF
*
DQ
2.5 V
Output Load 1
Output Load 2
225
225
5pF
*
* Distributed Test Jig Capacitance
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