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參數(shù)資料
| 型號： | GS8160Z18BGT-250 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Dual 2-wide 2-input AND-OR-Invert Gates 14-SOIC 0 to 70 |
| 中文描述： | 35.7流水線和流量，通過同步唑的SRAM |
| 文件頁數(shù)： | 13/23頁 |
| 文件大?。?/td> | 597K |
| 代理商： | GS8160Z18BGT-250 |
GS8160Z18/36BT-250/200/150
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 8/2004
13/23
2004, GSI Technology
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
–
0.5 to 4.6
V
–
0.5 to 4.6
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
V
DD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
3.3 V V
DDQ
I/O Supply Voltage
V
DDQ3
3.0
3.3
3.6
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
2.7
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8160Z18BGT-250I | Dual 2-wide 2-input AND-OR-Invert Gates 14-SOIC 0 to 70 |
| GS8160Z18BGT-250IT | Dual 2-wide 2-input AND-OR-Invert Gates 14-SOIC 0 to 70 |
| GS8160Z18BGT-250T | Dual 2-wide 2-input AND-OR-Invert Gates 14-SOIC 0 to 70 |
| GS8160Z36BGT-150IT | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8160Z36BGT-150T | Dual 2-wide 2-input AND-OR-Invert Gates 14-PDIP 0 to 70 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8160Z18BGT-250I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 5.5NS/2.5NS 100TQFP - Trays |
| GS8160Z18BGT-250IT | 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8160Z18BGT-250IV | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 5.5NS/3NS 100TQFP - Trays |
| GS8160Z18BGT-250T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8160Z18BGT-250V | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 5.5NS/3NS 100TQFP - Trays |
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