參數(shù)資料
型號: GS8160F32
廠商: GSI TECHNOLOGY
英文描述: 16Mb(512K x 36Bit)Sync Burst SRAM(16M位(512K x 36位)同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器))
中文描述: 16Mb的(為512k × 36Bit)同步突發(fā)靜態(tài)存儲器(1,600位(為512k × 36位)同步靜態(tài)隨機存儲器(帶2位脈沖地址計數(shù)器))
文件頁數(shù): 11/23頁
文件大小: 457K
代理商: GS8160F32
Rev: 2.06 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
11/23
1999, Giga Semiconductor, Inc.
Preliminary
GS8160F18/32/36T-7/8/8.5/10/11
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to
Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of
time, may affect reliability of this component.
Note:
1.
The part number of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications
quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DD
+2 V with a pulse width not to exceed 20% tKC.
2.
Symbol
V
DD
V
DDQ
V
CK
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
0.5 to 3.6
V
0.5 to 3.6
V
Voltage on Clock Input Pin
0.5 to 6
V
Voltage on I/O Pins
0.5 to V
DDQ
+0.5 (
3.6 V max.)
V
Voltage on Other Input Pins
0.5 to 3.6
V
Input Current on Any Pin
+/
20
mA
Output Current on Any I/O Pin
+/
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
55 to 125
o
C
T
BIAS
Temperature Under Bias
55 to 125
o
C
Recommended Operating Conditions
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Supply Voltage
V
DD
2.375
2.5
2.7
V
I/O Supply Voltage
V
DDQ
2.375
2.5
3.6
V
Input High Voltage
V
IH
0.7 * V
DD
3.6
V
1
Input Low Voltage
V
IL
0.3
0.3 * VDD
V
1
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
2
Ambient Temperature (Industrial Range Versions)
T
A
40
25
85
°
C
2
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