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參數(shù)資料
| 型號： | GS816036T-200I |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Quad 2-input positive-NAND buffers with open collector outputs 14-PDIP 0 to 70 |
| 中文描述： | 100萬× 18，512k × 32的，為512k × 36 35.7同步突發(fā)靜態(tài)存儲器 |
| 文件頁數(shù)： | 28/28頁 |
| 文件大?。?/td> | 810K |
| 代理商： | GS816036T-200I |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁當(dāng)前第28頁
Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
28/28
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
816018_r2_09;
816018_r2_10
Content
Updated Operating Currents table
Updated table on page 1; updated power numbers
Updated Recommended Operating Conditions table (added
V
DDQ
references)
Updated table on page 1
Created recommended operating conditions tables on pages
12 and 13
Updated AC Electrical Characteristics table
Added Sleep mode description on page 23
Updated Ordering Information for 225 MHz part (changed
from 7ns to 6.5 ns)
Added 250 MHz speed bin
Deleted 180 MHz speed bin
Updated AC Characteristics table
Updated FT power numbers
Updated Mb references from 16Mb to 18Mb
Updated AC Test Conditions table and removed Output Load
2 diagram
816018_r2_10;
816018_r2_11
Content
816018_r2_11;
816018_r2_12
Content
18Mb Sync SRAM Datasheet Revision History
DS/DateRev. Code: Old;
New
Types of Changes
Format or Content
Page;Revisions;Reason
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS816036T-225 | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816036T-225I | Quad 2-input positive-NAND buffers with open collector outputs 14-PDIP 0 to 70 |
| GS816036T-250 | Quad 2-input positive-NAND buffers with open collector outputs 14-SO 0 to 70 |
| GS816036T-250I | Quad 2-input positive-NAND buffers with open collector outputs 14-SO 0 to 70 |
| GS8160E18 | 16Mb（1M x 18Bit）Sync Burst SRAM(16M位（1M x 18位）同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS816036T-225 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816036T-225I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816036T-250 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816036T-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8160E18BGT-150 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays |
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