參數(shù)資料
型號: GS816036T-200
廠商: Electronic Theatre Controls, Inc.
元件分類: DRAM
英文描述: 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
中文描述: 1M×18,512k×32,512k×36 18M位同步突發(fā)靜態(tài)存儲器
文件頁數(shù): 24/28頁
文件大小: 810K
代理商: GS816036T-200
Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
24/28
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
TQFP Package Drawing
D
D
E1
E
P
b
e
c
L
L1
A2
A1
Y
θ
Notes:
1.
2.
All dimensions are in millimeters (mm).
Package width and length do not include mold protrusion.
Symbol
Description
Min.
Nom.
Max
A1
Standoff
0.05
0.10
0.15
A2
Body Thickness
1.35
1.40
1.45
b
Lead Width
0.20
0.30
0.40
c
Lead Thickness
0.09
0.20
D
Terminal Dimension
21.9
22.0
22.1
D1
Package Body
19.9
20.0
20.1
E
Terminal Dimension
15.9
16.0
16.1
E1
Package Body
13.9
14.0
14.1
e
Lead Pitch
0.65
L
Foot Length
0.45
0.60
0.75
L1
Lead Length
1.00
Y
Coplanarity
0.10
θ
Lead Angle
0
°
7
°
相關(guān)PDF資料
PDF描述
GS816036T-200I Quad 2-input positive-NAND buffers with open collector outputs 14-PDIP 0 to 70
GS816036T-225 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036T-225I Quad 2-input positive-NAND buffers with open collector outputs 14-PDIP 0 to 70
GS816036T-250 Quad 2-input positive-NAND buffers with open collector outputs 14-SO 0 to 70
GS816036T-250I Quad 2-input positive-NAND buffers with open collector outputs 14-SO 0 to 70
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS816036T-200I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036T-225 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036T-225I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036T-250 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036T-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs