參數(shù)資料
型號(hào): GS816036T-166
廠商: Electronic Theatre Controls, Inc.
元件分類(lèi): DRAM
英文描述: 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
中文描述: 1M×18,512k×32,512k×36 18M位同步突發(fā)靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù): 19/28頁(yè)
文件大?。?/td> 810K
代理商: GS816036T-166
Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
19/28
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Q1
A
Q3
A
Q2
D
Q2c
Q2
B
Q2
A
tKQ
tLZ
tOE
tOHZ
tOLZ
tKQX
tHZ
tKQX
CK
ADSP
ADSC
BW
G
GW
ADV
Burst Read
RD2
RD3
tKL
tS
tH
tH
tS tH
tS tH
ADSC initiated read
Suspend Burst
Single Read
ADSP is blocked by E inactive
A
0
An
B
A
B
B
tKH
tKC
tS tH
tS
tS
tH
DQ
A
DQ
D
RD1
Hi-Z
Suspend Burst
Flow Through Read Cycle Timing
E
2
tS
tH
tH
tH
E
1
masks ADSP
E
2
and E
3
only sampled with ADSP or ADSC
Deselected with E
2
E
3
E
1
tS
tS
相關(guān)PDF資料
PDF描述
GS816018T-250 Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 470uF; Voltage: 25V; Case Size: 12.5x20 mm; Packaging: Bulk
GS816018T-250I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-133 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-133I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-150 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS816036T-166I 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036T-200 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036T-200I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036T-225 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036T-225I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs