參數(shù)資料
型號: GS816032T-225
廠商: Electronic Theatre Controls, Inc.
英文描述: Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 220uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
中文描述: 100萬× 18,512k × 32的,為512k × 36 35.7同步突發(fā)靜態(tài)存儲器
文件頁數(shù): 20/28頁
文件大小: 810K
代理商: GS816032T-225
Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
20/28
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Flow Through Read-Write Cycle Timing
CK
ADSP
ADSC
ADV
GW
BW
G
RD1
RD2
Q1
A
Q2
A
Q2
B
Q2c
Q2
D
Single Read
Burst Read
tOE
tOHZ
tS
tH
tH
tS tH
tS tH
tS tH
tS tH
tKH
ADSC initiated read
DQ
A
DQ
D
B
A
B
D
A
0
A
n
tKL
tKC
tS
Single Write
ADSP is blocked by E inactive
tKQ
Hi-Z
Q2
A
Burst wrap around to it’s initial state
E
1
E
3
E
2
tS
tS tH
tS
E
1
masks ADSP
E
2
and E
3
only sampled with ADSP and ADSC
Deselected with E
3
tH
tH
WR1
tS
WR1
tS
tH
D1
A
tS
tH
相關(guān)PDF資料
PDF描述
GS816032T-225I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-250 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-250I Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 33uF; Voltage: 50V; Case Size: 8x11.5 mm; Packaging: Bulk
GS816018 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816018T-133 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS816032T-225I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036BGT-150 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 7.5NS/3.8NS 100TQFP - Trays
GS816036BGT-150I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 7.5NS/3.8NS 100TQFP - Trays