參數(shù)資料
型號: GS816032T-150I
廠商: Electronic Theatre Controls, Inc.
元件分類: DRAM
英文描述: 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
中文描述: 1M×18,512k×32,512k×36 18M位同步突發(fā)靜態(tài)存儲器
文件頁數(shù): 5/28頁
文件大?。?/td> 810K
代理商: GS816032T-150I
Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
5/28
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
TQFP Pin Description
Pin Location
37, 36
Symbol
A
0
, A
1
Type
I
Description
Address field LSBs and Address Counter preset Inputs
35, 34, 33, 32, 100, 99, 82, 81, 44, 45, 46,
47, 48, 49, 50, 43, 42
80
63, 62, 59, 58, 57, 56, 53, 52
68, 69, 72, 73, 74, 75, 78, 79
13, 12, 9, 8, 7, 6, 3, 2
18, 19, 22, 23, 24, 25, 28, 29
A
2
A
18
I
Address Inputs
A
19
I
Address Inputs (x18 versions)
DQ
A1
DQ
A8
DQ
B1
DQ
B8
DQ
C1
DQ
C8
DQ
D1
DQ
D8
DQ
A9
, DQ
B9
,
DQ
C9
, DQ
D9
NC
DQ
A1
DQ
A9
DQ
B1
DQ
B9
I/O
Data Input and Output pins (x32, x36 Version)
51, 80, 1, 30
I/O
Data Input and Output pins (x36 Version)
51, 80, 1, 30
No Connect (x32 Version)
58, 59, 62, 63, 68, 69, 72, 73, 74
8, 9, 12, 13, 18, 19, 22, 23, 24
51, 52, 53, 56, 57
75, 78, 79, 95, 96,
1, 2, 3, 6, 7,
25, 28, 29, 30
87
93, 94
I/O
Data Input and Output pins (x18 Version)
NC
No Connect (x18 Version)
BW
B
A
, B
B
I
I
Byte Write
Writes all enabled bytes; active low
Byte Write Enable for DQ
A
, DQ
B
Data I/Os; active low
Byte Write Enable for DQ
C
, DQ
D
Data I/Os; active low
(x32, x36 Version)
Clock Input Signal; active high
Global Write Enable
Writes all bytes; active low
Chip Enable; active low
Chip Enable; active high
Output Enable; active low
Burst address counter advance enable; active low
Address Strobe (Processor, Cache Controller); active low
Sleep Mode control; active high
Flow Through or Pipeline mode; active low
Linear Burst Order mode; active low
95, 96
B
C
, B
D
I
89
88
CK
GW
E
1
, E
3
E
2
G
ADV
I
I
I
I
I
I
I
I
I
I
98, 92
97
86
83
84, 85
64
14
31
ADSP, ADSC
ZZ
FT
LBO
V
DD
V
SS
V
DDQ
NC
15, 41, 65, 91
I
Core power supply
5,10,17, 21, 26, 40, 55, 60, 67, 71, 76, 90
I
I/O and Core Ground
4, 11, 20, 27, 54, 61, 70, 77
I
Output driver power supply
16, 38, 39, 66
No Connect
相關PDF資料
PDF描述
GS816032T-166 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-166I Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 100uF; Voltage: 50V; Case Size: 10x20 mm; Packaging: Bulk
GS816032T-200 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
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相關代理商/技術參數(shù)
參數(shù)描述
GS816032T-166 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-166I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-200 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-200I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-225 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs