參數(shù)資料
型號(hào): GS816018T-225
廠商: Electronic Theatre Controls, Inc.
英文描述: Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 6.3x11 mm; Packaging: Bulk
中文描述: 100萬(wàn)× 18,512k × 32的,為512k × 36 35.7同步突發(fā)靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù): 6/28頁(yè)
文件大?。?/td> 810K
代理商: GS816018T-225
Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
6/28
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
GS816018/32/36 Block Diagram
A1
A0
A0
A1
D0
D1
Q1
Q0
Counter
Load
D
Q
D
Q
Register
Register
D
Q
Register
D
Q
Register
D
Q
Register
D
Q
Register
D
Q
Register
D
Q
Register
D
Q
R
D
Q
R
A0
An
LBO
ADV
CK
ADSC
ADSP
GW
BW
B
A
E
1
E
2
E
3
G
ZZ
Power Down
Control
Memory
Array
36
36
4
A
Q
D
DQx1
DQx9
Note: Only x36 version shown for simplicity.
1
B
B
B
C
B
D
FT
相關(guān)PDF資料
PDF描述
GS816018T-225I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036T-166I Quad 2-input positive-NAND buffers with open collector outputs 14-SOIC 0 to 70
GS816036T-200 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036T-200I Quad 2-input positive-NAND buffers with open collector outputs 14-PDIP 0 to 70
GS816036T-225 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS816018T-225I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816018T-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816018T-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032BGT-150 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays
GS816032BGT-150I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays