參數(shù)資料
型號: GS816018
廠商: Electronic Theatre Controls, Inc.
元件分類: DRAM
英文描述: 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
中文描述: 1M×18,512k×32,512k×36 18M位同步突發(fā)靜態(tài)存儲器
文件頁數(shù): 20/28頁
文件大?。?/td> 810K
代理商: GS816018
Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
20/28
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Flow Through Read-Write Cycle Timing
CK
ADSP
ADSC
ADV
GW
BW
G
RD1
RD2
Q1
A
Q2
A
Q2
B
Q2c
Q2
D
Single Read
Burst Read
tOE
tOHZ
tS
tH
tH
tS tH
tS tH
tS tH
tS tH
tKH
ADSC initiated read
DQ
A
DQ
D
B
A
B
D
A
0
A
n
tKL
tKC
tS
Single Write
ADSP is blocked by E inactive
tKQ
Hi-Z
Q2
A
Burst wrap around to it’s initial state
E
1
E
3
E
2
tS
tS tH
tS
E
1
masks ADSP
E
2
and E
3
only sampled with ADSP and ADSC
Deselected with E
3
tH
tH
WR1
tS
WR1
tS
tH
D1
A
tS
tH
相關PDF資料
PDF描述
GS816018T-133 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816018T-133I Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 10x16 mm; Packaging: Bulk
GS816018T-150 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816018T-150I Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 2200uF; Voltage: 25V; Case Size: 18x35.5 mm; Packaging: Bulk
GS816018T-166 Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 6.3x11 mm; Packaging: Bulk
相關代理商/技術參數(shù)
參數(shù)描述
GS816018BGT-150 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays
GS816018BGT-150I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays
GS816018BGT-150IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays
GS816018BGT-150V 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays
GS816018BGT-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 6.5NS/3NS 100TQFP - Trays