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參數(shù)資料
| 型號： | GS8150F18 |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 16Mb（1M x 18Bit）Synchronous Burst SRAM(16M位（1M x 18位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
| 中文描述： | 16Mb的（100萬x 18位）同步突發(fā)靜態(tài)存儲器（1,600位（100萬× 18位）同步靜態(tài)隨機存儲器（帶2位脈沖地址計數(shù)器）） |
| 文件頁數(shù)： | 10/23頁 |
| 文件大?。?/td> | 456K |
| 代理商： | GS8150F18 |
Rev: 1.01 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
10/23
2000, Giga Semiconductor, Inc.
Preliminary
GS8150F18/32/36T-7/8/8.5/10/11
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
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