參數(shù)資料
型號: GS815036
廠商: GSI TECHNOLOGY
英文描述: 16Mb(512K x 36Bit)Synchronous Burst SRAM(16M位(512K x 36位)同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器))
中文描述: 16Mb的(為512k × 36Bit)同步突發(fā)靜態(tài)存儲器(1,600位(為512k × 36位)同步靜態(tài)隨機存儲器(帶2位脈沖地址計數(shù)器))
文件頁數(shù): 17/26頁
文件大?。?/td> 516K
代理商: GS815036
Rev: 1.02 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
17/26
2000, Giga Semiconductor, Inc.
Preliminary
GS815018/32/36T-225/200/180/166/150/133
Write Cycle Timing
CK
ADSP
ADSC
ADV
GW
BW
G
WR2
WR3
WR1
WR1
WR2
WR3
tKC
Single Write
Burst Write
D2
A
D2
B
D2
C
D2
D
D3
A
D1
A
t
KL
t
KH
tS tH
tS tH
tS tH
tS tH
tS tH
tS tH
tS tH
tS tH
Write specified byte for 2
A
and all bytes for 2
B
, 2
C
& 2
D
ADV must be inactive for ADSP Write
ADSC initiated write
ADSP is blocked by E inactive
A
0
–An
B
A
–B
D
DQ
A
–DQ
D
Write
Deselected
Hi-Z
E
1
E
3
tS tH
tS tH
tS tH
E
2
and E
3
only sampled with ADSP or ADSC
E
1
masks ADSP
E
2
Deselected with E
2
相關(guān)PDF資料
PDF描述
GS8150E18 16Mb(1M x 18Bit)Synchronous Burst SRAM(16M位(1M x 18位)同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器))
GS8150E32 16Mb(512K x 32Bit)Synchronous Burst SRAM(16M位(512K x 32位)同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器))
GS8150E36 16Mb(512K x 36Bit)Synchronous Burst SRAM(16M位(512K x 36位)同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器))
GS8150F18 16Mb(1M x 18Bit)Synchronous Burst SRAM(16M位(1M x 18位)同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器))
GS8150F32 16Mb(512K x 32Bit)Synchronous Burst SRAM(16M位(512K x 32位)同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS815036AB-250 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V 18MBIT 512KX36 2NS 119FPBGA - Trays
GS815036AB-250I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V 18MBIT 512KX36 2NS 119FPBGA - Trays
GS815036AB-300 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V 18MBIT 512KX36 1.6NS 119FPBGA - Trays
GS815036AB-300I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V 18MBIT 512KX36 1.6NS 119FPBGA - Trays
GS815036AB-333 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V 18MBIT 512KX36 1.5NS 119FBGA - Trays