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Rev: 1.03 10/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
4/14
2001, Giga Semiconductor, Inc.
GS74116ATP/J/X
Note:
1.
2.
Input overshoot voltage should be less than V
DD
+2 V and not exceed 20 ns.
Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Notes:
1.
2.
Tested at T
A
= 25°C, f = 1 MHz
These parameters are sampled and are not 100% tested.
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -7/-8/-10/-12
V
DD
3.0
3.3
3.6
V
Input High Voltage
V
IH
2.0
—
V
DD
+0.3
V
Input Low Voltage
V
IL
–0.3
—
0.8
V
Ambient Temperature,
Commercial Range
T
Ac
0
—
70
o
C
Ambient Temperature,
Industrial Range
T
A
I
–40
—
85
o
C
Capacitance
Parameter
Symbol
Test Condition
Max
Unit
Input Capacitance
C
IN
V
IN
= 0 V
5
pF
Output Capacitance
C
OUT
V
OUT
= 0 V
7
pF
DC I/O Pin Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage
Current
I
IL
V
IN
= 0 to V
DD
– 1 uA
1 uA
Output Leakage
Current
I
LO
Output High Z
V
OUT
= 0 to V
DD
–1 uA
1 uA
Output High Voltage
V
OH
I
OH
= –4 mA
2.4
—
Output Low Voltage
V
OL
I
LO
= +4 mA
—
0.4 V
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| GS74116AX-7T | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 16 4Mb Asynchronous SRAM |
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| GS74116AX-8IT | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 16 4Mb Asynchronous SRAM |
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