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參數(shù)資料
| 型號： | GS74108AJ-8 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 512K x 8 4Mb Asynchronous SRAM |
| 中文描述： | 512K X 8 STANDARD SRAM, 8 ns, PDSO36 |
| 封裝： | 0.400 INCH, SOJ-36 |
| 文件頁數(shù)： | 5/13頁 |
| 文件大?。?/td> | 403K |
| 代理商： | GS74108AJ-8 |
DQ
VT = 1.4 V
50
30pF
1
DQ
3.3 V
Output Load 1
Output Load 2
589
434
5pF
1
Notes:
1.
2.
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
Output load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
3.
Parameter
Conditions
Input high level
V
IH
= 2.4 V
Input low level
V
IL
= 0.4 V
Input rise time
tr = 1 V/ns
Input fall time
tf = 1 V/ns
Input reference level
1.4 V
Output reference level
1.4 V
Output load
Fig. 1& 2
GS74108ATP/J/X
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.07 1/2006
5/13
2001, Giga Semiconductor, Inc.
AC Test Conditions
AC Characteristics
Read Cycle
Parameter
Symbol
-8
-10
-12
Unit
Min
Max
Min
Max
Min
Max
Read cycle time
t
8
—
10
—
12
—
ns
Address access time
t
—
8
—
10
—
12
ns
Chip enable access time (CE)
t
—
8
—
10
—
12
ns
Output enable to output valid (OE)
t
—
3.5
—
4
—
5
ns
Output hold from address change
t
3
—
3
—
3
—
ns
Chip enable to output in low Z (CE)
t
*
3
—
3
—
3
—
ns
Output enable to output in low Z (OE)
t
*
0
—
0
—
0
—
ns
Chip disable to output in High Z (CE)
t
*
—
4
—
5
—
6
ns
Output disable to output in High Z (OE)
t
*
—
3.5
—
4
—
5
ns
* These parameters are sampled and are not 100% tested.
RC
AA
AC
OE
OH
LZ
OLZ
HZ
OHZ
相關PDF資料 |
PDF描述 |
|---|---|
| GS74108AJ-8I | 512K x 8 4Mb Asynchronous SRAM |
| GS74108ATP | 512K x 8 4Mb Asynchronous SRAM |
| GS74108ATP-10 | 512K x 8 4Mb Asynchronous SRAM |
| GS74108ATP-10I | 512K x 8 4Mb Asynchronous SRAM |
| GS74108ATP-12 | 512K x 8 4Mb Asynchronous SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GS74108AJ-8I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 8 4Mb Asynchronous SRAM |
| GS74108ATP | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 8 4Mb Asynchronous SRAM |
| GS74108ATP-10 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 8 4Mb Asynchronous SRAM |
| GS74108ATP-10I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 8 4Mb Asynchronous SRAM |
| GS74108ATP-12 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 8 4Mb Asynchronous SRAM |
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