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參數(shù)資料
| 型號(hào)： | GS74108AJ-12I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 512K x 8 4Mb Asynchronous SRAM |
| 中文描述： | 512K X 8 STANDARD SRAM, 12 ns, PDSO36 |
| 封裝： | 0.400 INCH, SOJ-36 |
| 文件頁數(shù)： | 7/13頁 |
| 文件大?。?/td> | 403K |
| 代理商： | GS74108AJ-12I |
Write Cycle
Parameter
Symbol
-8
-10
-12
Unit
Min
Max
Min
Max
Min
Max
Write cycle time
tWC
8
—
10
—
12
—
ns
Address valid to end of write
tAW
5.5
—
7
—
8
—
ns
Chip enable to end of write
tCW
5.5
—
7
—
8
—
ns
Data set up time
tDW
4
—
5
—
6
—
ns
Data hold time
tDH
0
—
0
—
0
—
ns
Write pulse width
tWP
5.5
—
7
—
8
—
ns
Address set up time
tAS
0
—
0
—
0
—
ns
Write recovery time (WE)
tWR
0
—
0
—
0
—
ns
Write recovery time (CE)
tWR1
0
—
0
—
0
—
ns
Output Low Z from end of write
tWLZ
*
3
—
3
—
3
—
ns
Write to output in High Z
tWHZ
*
—
3.5
—
4
—
5
ns
GS74108ATP/J/X
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.07 1/2006
7/13
2001, Giga Semiconductor, Inc.
* These parameters are sampled and are not 100% tested.
t
WC
Address
CE
WE
Data In
OE
Data Out
t
AW
t
CW
t
AS
t
WP
t
WR
t
DW
t
DH
t
WLZ
t
WHZ
D
ATA
VALID
H
IGH
IMPEDANCE
Write Cycle 1: WE control
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS74108AJ-8 | 512K x 8 4Mb Asynchronous SRAM |
| GS74108AJ-8I | 512K x 8 4Mb Asynchronous SRAM |
| GS74108ATP | 512K x 8 4Mb Asynchronous SRAM |
| GS74108ATP-10 | 512K x 8 4Mb Asynchronous SRAM |
| GS74108ATP-10I | 512K x 8 4Mb Asynchronous SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS74108AJ-12T | 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 4MBIT 512KX8 12NS 36PIN SOJ - Tape and Reel |
| GS74108AJ-8 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 8 4Mb Asynchronous SRAM |
| GS74108AJ-8I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 8 4Mb Asynchronous SRAM |
| GS74108ATP | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 8 4Mb Asynchronous SRAM |
| GS74108ATP-10 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 8 4Mb Asynchronous SRAM |
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