- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385314 > GS74108AGJ-12I (GSI TECHNOLOGY) 512K x 8 4Mb Asynchronous SRAM PDF資料下載
參數(shù)資料
| 型號： | GS74108AGJ-12I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 512K x 8 4Mb Asynchronous SRAM |
| 中文描述： | 512K X 8 STANDARD SRAM, 12 ns, PDSO36 |
| 封裝： | 0.400 INCH, ROHS COMPLIANT, SOJ-36 |
| 文件頁數(shù)： | 5/13頁 |
| 文件大?。?/td> | 403K |
| 代理商： | GS74108AGJ-12I |
DQ
VT = 1.4 V
50
30pF
1
DQ
3.3 V
Output Load 1
Output Load 2
589
434
5pF
1
Notes:
1.
2.
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
Output load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
3.
Parameter
Conditions
Input high level
V
IH
= 2.4 V
Input low level
V
IL
= 0.4 V
Input rise time
tr = 1 V/ns
Input fall time
tf = 1 V/ns
Input reference level
1.4 V
Output reference level
1.4 V
Output load
Fig. 1& 2
GS74108ATP/J/X
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.07 1/2006
5/13
2001, Giga Semiconductor, Inc.
AC Test Conditions
AC Characteristics
Read Cycle
Parameter
Symbol
-8
-10
-12
Unit
Min
Max
Min
Max
Min
Max
Read cycle time
t
8
—
10
—
12
—
ns
Address access time
t
—
8
—
10
—
12
ns
Chip enable access time (CE)
t
—
8
—
10
—
12
ns
Output enable to output valid (OE)
t
—
3.5
—
4
—
5
ns
Output hold from address change
t
3
—
3
—
3
—
ns
Chip enable to output in low Z (CE)
t
*
3
—
3
—
3
—
ns
Output enable to output in low Z (OE)
t
*
0
—
0
—
0
—
ns
Chip disable to output in High Z (CE)
t
*
—
4
—
5
—
6
ns
Output disable to output in High Z (OE)
t
*
—
3.5
—
4
—
5
ns
* These parameters are sampled and are not 100% tested.
RC
AA
AC
OE
OH
LZ
OLZ
HZ
OHZ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS74108AGJ-8 | 512K x 8 4Mb Asynchronous SRAM |
| GS74108AGJ-8I | 512K x 8 4Mb Asynchronous SRAM |
| GS74108AGP-10 | 512K x 8 4Mb Asynchronous SRAM |
| GS74108AGP-10I | 512K x 8 4Mb Asynchronous SRAM |
| GS74108AGP-12 | 512K x 8 4Mb Asynchronous SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS74108AGJ-8 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 8 4Mb Asynchronous SRAM |
| GS74108AGJ-8I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 8 4Mb Asynchronous SRAM |
| GS74108AGP-10 | 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 4MBIT 512KX8 10NS 44TSOP-II - Trays |
| GS74108AGP-10I | 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 4MBIT 512KX8 10NS 44TSOP-II - Trays 制造商:GSI Technology 功能描述:4MB ASYNCH SRAM 512K X 8 10NS SMD 制造商:GSI Technology 功能描述:4MB ASYNCH SRAM 512K X 8, 10NS, SMD 制造商:GSI Technology 功能描述:MEMORY, SRAM, 4MBIT, 10NS, TSOPII-44; Memory Size:4Mbit; Memory Configuration:512K x 8; Supply Voltage Min:3V; Supply Voltage Max:3.6V; Memory Case Style:TSOP-2; No. of Pins:44; Access Time:10ns; Operating Temperature Min:-40C ;RoHS Compliant: Yes |
| GS74108AGP-12 | 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 4MBIT 512KX8 12NS 44TSOP-II - Trays |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。