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參數(shù)資料
| 型號(hào)： | GS74108 |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 4Mb（512K x 8Bit）Asynchronous SRAM(4M位（512K x 8位）異步靜態(tài)RAM) |
| 中文描述： | 4Mb的（為512k × 8位）異步SRAM（4分位（為512k × 8位）異步靜態(tài)RAM）的 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 241K |
| 代理商： | GS74108 |
Rev: 1.06 7/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
3/12
1999, Giga Semiconductor, Inc.
GS74108TP/J
Note: X: “H” or “L”
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Truth Table
CE
OE
WE
DQ
1
to DQ
8
V
DD
Current
H
X
X
Not Selected
ISB
1
, ISB
2
L
L
H
Read
I
DD
L
X
L
Write
L
H
H
High Z
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
V
DD
-0.5 to +4.6
V
Input Voltage
V
IN
-0.5 to V
DD
+0.5
(
≤
4.6V max.)
V
Output Voltage
V
OUT
-0.5 to V
DD
+0.5
(
≤
4.6V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
T
STG
-55 to 150
o
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS74116A | 256K x 16 4Mb Asynchronous SRAM |
| GS74116AJ-10 | 256K x 16 4Mb Asynchronous SRAM |
| GS74116AJ-10I | 256K x 16 4Mb Asynchronous SRAM |
| GS74116AJ-10IT | 256K x 16 4Mb Asynchronous SRAM |
| GS74116AJ-10T | 256K x 16 4Mb Asynchronous SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS74108AGJ-10 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 8 4Mb Asynchronous SRAM |
| GS74108AGJ-10I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 8 4Mb Asynchronous SRAM |
| GS74108AGJ-10IT | 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 4MBIT 512KX8 10NS 36PIN SOJ - Tape and Reel |
| GS74108AGJ-12 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 8 4Mb Asynchronous SRAM |
| GS74108AGJ-12I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 8 4Mb Asynchronous SRAM |
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