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參數(shù)資料
| 型號： | GS74104AJ-10I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 1M x 4 4Mb Asynchronous SRAM |
| 中文描述： | 1M X 4 STANDARD SRAM, 10 ns, PDSO32 |
| 封裝： | 0.400 INCH, SOJ-32 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大小： | 318K |
| 代理商： | GS74104AJ-10I |
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
V
DD
–0.5 to +4.6
V
Input Voltage
V
IN
–0.5 to V
DD
+0.5
(
≤
4.6 V max.)
V
Output Voltage
V
OUT
–0.5 to V
DD
+0.5
(
≤
4.6 V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
T
STG
–55 to 150
o
C
GS74104ATP/J
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 6/2006
3/11
2001, GSI Technology
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Supply Voltage for -8/-10/-12
V
DD
3.0
3.3
3.6
V
Input High Voltage
V
IH
2.0
—
V
DD
+0.3
V
Input Low Voltage
V
IL
–0.3
—
0.8
V
Ambient Temperature,
Commercial Range
T
Ac
0
—
70
o
C
Ambient Temperature,
Industrial Range
T
A
I
–40
—
85
o
C
Notes:
1.
2.
Input overshoot voltage should be less than V
DD
+2 V and not exceed 20 ns.
Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Capacitance
Parameter
Symbol
Test Condition
Max
Unit
Input Capacitance
C
V = 0 V
IN
5
pF
Output Capacitance
C
V
= 0 V
7
pF
Notes:
1.
2.
Tested at T
A
= 25°C, f = 1 MHz
These parameters are sampled and are not 100% tested.
IN
OUT
OUT
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS74104AJ-12 | 1M x 4 4Mb Asynchronous SRAM |
| GS74104AJ-12I | 1M x 4 4Mb Asynchronous SRAM |
| GS74104AJ-8 | 1M x 4 4Mb Asynchronous SRAM |
| GS74104AJ-8I | 1M x 4 4Mb Asynchronous SRAM |
| GS74104ATP | 1M x 4 4Mb Asynchronous SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS74104AJ-12 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 4 4Mb Asynchronous SRAM |
| GS74104AJ-12I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 4 4Mb Asynchronous SRAM |
| GS74104AJ-8 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 4 4Mb Asynchronous SRAM |
| GS74104AJ-8I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 4 4Mb Asynchronous SRAM |
| GS74104ATP | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 4 4Mb Asynchronous SRAM |
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