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參數(shù)資料
| 型號(hào)： | GS7407 |
| 廠(chǎng)商： | GTM CORPORATION |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P溝道增強(qiáng)型功率MOSFET |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 288K |
| 代理商： | GS7407 |
GS7407
Page: 2/4
ISSUED DATE :2006/08/15
REVISED DATE :
Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-20
-
V
VGS=0, ID=-250uA
Gate Threshold Voltage
VGS(th)
-0.3
-
-1.0
V
VDS=VGS, ID=-250uA
Forward Transconductance
gfs
-
7
-
S
VDS=-5V, ID=-3A
Gate-Source Leakage Current
IGSS
-
±100
nA
VGS= ±8V
Drain-Source Leakage Current(Tj=25 : )
-
-1
uA
VDS=-16V, VGS=0
Drain-Source Leakage Current(Tj=55 : )
IDSS
-
-5
uA
VDS=-16V, VGS=0
-
135
VGS=-4.5V, ID=-1.2A
-
170
VGS=-2.5V, ID=-1.0A
Static Drain-Source On-Resistance
RDS(ON)
-
220
m
VGS=-1.8V, ID=-1.0A
Total Gate Charge2
Qg
-
6.2
-
Gate-Source Charge
Qgs
-
0.54
-
Gate-Drain (“Miller”) Change
Qgd
-
1.44
-
nC
ID=-1.0A
VDS=-10V
VGS=-4.5V
Turn-on Delay Time2
Td(on)
-
12
-
Rise Time
Tr
-
10.7
-
Turn-off Delay Time
Td(off)
-
74
-
Fall Time
Tf
-
28.7
-
ns
VDS=-10V
VGS=-4.5V
RG=3
RL=15
Input Capacitance
Ciss
-
540
-
Output Capacitance
Coss
-
72
-
Reverse Transfer Capacitance
Crss
-
49
-
pF
VGS=0V
VDS=-10V
f=1.0MHz
Gate Resistance
Rg
-
12
-
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
-1.0
V
IS=-1.0A, VGS=0V
Reverse Recovery Time2
Trr
-
24.5
-
ns
Reverse Recovery Charge
Qrr
-
17.4
-
nC
IS=-1A, VGS=0V
dI/dt=100A/ s
Continuous Source Current (Body Diode)
IS
-
-0.6
A
VD=VG=0V, VS=-1.0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t
10sec.
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