參數(shù)資料
型號(hào)： GPTR3190
廠商： Electronic Theatre Controls, Inc.
英文描述： PHASE CONTROLLED SCR
中文描述： 相控可控硅
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 128K
代理商： GPTR3190
GPTR3190
PHASE CONTROLLED SCR
High reliability operation
DC power supply
AC drives
VOLTAGE UP TO
2400 V
AVERAGE CURRENT
SURGE CURRENT
1900 A
22 kA
BLOCKING CHARACTERISTICS
Characteristic
V
RRM
Repetitive peak reverse voltage
V
RSM
Non-repetitive peak reverse voltage
V
DRM
Repetitive peak off-state voltage
I
DRM
Repetitive peak off-state current, max.
I
RRM
Repetitive peak reverse current, max.
Conditions
2400
2500
2400
70
70
V
V
V
mA
mA
V
DRM
, single phase, half wave, Tj = Tjmax
V
RRM
, single phase, half wave, Tj = Tjmax
ON-STATE CHARACTERISTICS
I
T(AV)
Average on-state current
I
T(RMS)
R.M.S. on-state current
I
TSM
Surge on-state current
I2t
I2 t for fusing coordination
V
T(TO)
Threshold voltage
r
T
On-state slope resistance
V
TM
Peak on-state voltage, max
I
H
Holding current, max
I
L
Latching current, typ
Sine wave,180° conduction, Th = 55 °C
Sine wave,180° conduction, Th = 55 °C
Non rep. half sine wave, 50 Hz, V
R
= 0 V, T
j
= T
jmax
1900
2984
A
A
kA
kA2s
V
m
V
mA
mA
22
2420
1.04
0.23
2.15
300
500
T
j
= T
jmax
T
j
= T
jmax
On-state current I
T
= 5000 A , Tj = 25 °C
T
j
= 25 °C
T
j
= 25 °C
TRIGGERING CHARACTERISTICS
V
GT
Gate trigger voltage
I
GT
Gate trigger current
V
GD
Non-trigger voltage
P
GM
Peak gate power dissipation
P
G(AV)
Average gate power dissipation
I
FGM
Peak gate current
V
FGM
Peak gate voltage (forward)
V
RGM
Peak gate voltage (reverse)
T
j
= 25 °C, V
D
= 5 V
T
j
= 25 °C, V
D
= 5 V
V
D
= 67% V
RRM
, T
j
= T
jmax
3
V
mA
V
W
W
A
V
V
400
0.15
100
Pulse width 0.5 ms
5
30
12
3
SWITCHING CHARACTERISTICS
di/dt
dV/dt
t
q
Critical rate of rise of on-state current
Critical rate of rise of off-state voltage
Turn-off time, typ
T
j
= T
jmax
T
j
= T
jmax
T
j
= T
jmax
, I
T
= 800 A, di/dt = -12.5 A/μs
VR = 100 V, VD = 67% VDRM, dV/dt = 20 V/μs
200
1000
400
A/μs
V/μs
μs
THERMAL AND MECHANICAL CHARACTERISTICS
R
th(j-c)
Thermal resistance (junction to case)
R
th(c-h)
Thermal resistance (case to heatsink)
T
jmax
Max operating junction temperature
T
stg
Storage temperature
F
Clamping force ± 10%
Mass
Double side cooled
Double side cooled
0.016
0.001
125
°C/W
°C/W
°C
°C
kN
g
-40 / 125
30
1400
Document GPTR3190T001
Value
Green Power Solutions srl
Via Greto di Cornigliano 6R - 16152 Genova , Italy
Phone: +39-010-659 1869
Fax: +39-010-659 1870
Web: www.gpsemi.it
E-mail: info@gpsemi.it
Green Power
Semiconductors
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