參數(shù)資料
型號(hào): GP500LSS06S
廠商: DYNEX SEMICONDUCTOR LTD
元件分類: 功率晶體管
英文描述: Single Switch IGBT Module
中文描述: 700 A, 600 V, N-CHANNEL IGBT
封裝: L, 5 PIN
文件頁(yè)數(shù): 7/10頁(yè)
文件大?。?/td> 143K
代理商: GP500LSS06S
GP500LSS06S
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
7/10
Fig.11 Typical switching characteristics
Fig.13 Reverse bias safe operating area
Fig.14 Forward bias safe operating area (DC and single pulse)
Fig.12 Diode typical forward characteristics
0
50
100
150
200
250
300
350
400
450
500
0
0.25
0.50
0.75
1.00
1.25
Foward voltage, V
F
- (V)
F
F
T
j
= 125
C
T
j
= 25
C
0
200
400
600
800
1000
1200
0
200
Collector-emitter voltage, V
ce
- (V)
400
600
800
C
C
T
j
= 125
C
V
ge
=
±
15V
R
g
= 5
0
300
100
200
Collector current, I
C
- (A)
0
800
1800
S
T
j
= 125
C
V
GE
=
±
15V
V
CE
= 300V
R
g
= 5
t
f
t
d(off)
t
r
t
d(on)
1200
1000
200
600
400
1400
1600
400
500
1
10
100
1000
C
C
10000
1
10
100
1000
Collector-emitter voltage, V
ce
- (V)
50
μ
s
100
μ
s
I
C
max. (single pulse)
I
C
max DC(coninuous
p
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